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題 名 | 反應性磁控濺鍍氧化鎢薄膜氧含量對其電致色變性質之影響=Effect of Oxygen Concentration on the Reactive Magnetron Sputter Deposited Electrochromic Tungsten Oxide |
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作 者 | 何主亮; 邱明傑; | 書刊名 | 真空科技 |
卷 期 | 12:3 1999.10[民88.10] |
頁 次 | 頁4-15 |
分類號 | 440.35 |
關鍵詞 | 射頻磁控濺鍍系統; 氧化鎢薄膜; 氧含量; 電致色變; |
語 文 | 中文(Chinese) |
中文摘要 | 電致色變材料中的氧化鎢近年因相對於 其它材料有較高的變色效率而倍受注意。 先後發展出多種鍍膜製備方法以供元件製作之用。其中的濺鍍法是被認為較具優勢的一種方 法。如果採用反應性濺鍍,若干文獻顯示氧含量是重要的因素,本研究旨在了解含量對鍍膜 性質的影響,以供製作時的最佳化依據。 研究中使用反應性射頻磁控濺鍍系統被覆氧化鎢於 ITO 玻璃上,改變氧 / 氬流量比以調整 鍍膜中的氧含量。分析鍍膜的微觀型態、晶體結構、組成元素及鍵結狀態。測定循環伏安曲 線、響應時間、著色與去色狀態時的可見 -- 紫外光譜。以便了解微觀結構對電致色變特性 的影響。 研究結果顯示; 低氧 / 氬流量比所得鍍膜的離子遷入量是被鍍膜中不參予變色的共邊低價 鎢離子所決定,高氧 / 氬流量比所得鍍膜的離子遷入量是被較少的氧空缺數量所控制。 因 此在氧 / 氬流量比 0.4-0.5 時出現最佳化值。著色前後的穿透度變化此時達到最大。著、 去色響應時間分別為 150 秒及 30 秒左右。 |
英文摘要 | Much attention is paid recently to the tungsten oxide due to its high coloration efficiency among those electrochromic materials. WO �� deposited by reactive sputtering as reported is suspicious to oxygen concentration in a sputtering system, which is however beneficial for process control. In this paper, a survey on the effect of oxygen concentration in the rf sputtering atmosphere on the subsequent deposited film is studied to reveal the microstructure change in relation with their electrochromic properties. A reactive magnetron sputter deposition was used to deposit tungsten oxide films on ITO glass at different O �� /Ar flow ratio. Microstructure of the deposited films is examined films is examined. Electrochromic properties including cyclic voltammetry behavior, coloring and bleaching response time. optical density change is determined. Experimental results show that maximum current occurs to O �� /Ar flow ratio between 0.4-0.5. This may be compromised by the low valence tungsten ion that play the role in expelling cations in the films deposited at low O �� / Ar flow ratio and hypothetically the few oxygen deficiencies in the films deposited at high O �� / Ar flow ratio. As a whole. the optimized O �� / Ar flow ratio would be in the range 0.4-0.5 for transmittance control application. Coloring and bleaching response time within this range is about 150 s and 30 s, respectively. |
本系統中英文摘要資訊取自各篇刊載內容。