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題名 | 以平衡流動觀點分析膜片澆口之最佳位置=The Optimal Location of Film Gate by Balanced Flow Viewpoint |
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作 者 | 陳榮盛; 毛昭陽; 黃登淵; | 書刊名 | 力學 |
卷期 | 13:2 1997.06[民86.06] |
頁次 | 頁153-159 |
分類號 | 467.41 |
關鍵詞 | 膜片澆口; 平衡流動; 整合變異性能參數; 模擬退火演算法; 爬山演算法; 田口方法; Film gate; Balanced flow; Integrated variance performance parameter; Simulated annealing-hill climbing algorithm; Taguchi method; |
語文 | 中文(Chinese) |
中文摘要 | 本文以電腦模擬軟體C-MOLD中之C-FLOW模組做充填分析,考慮平衡流動性,建構 一個能求解澆口位置之數學模型-整合變異性能參數 (Integrated Variance Performance Parameter),可對各種流動型式 (flow pattern) 予以評比,並結合最佳化設計理論,發展 出一套膜片澆口位置的設計系統,而獲取最適澆口位置,以達到 CAE 自動化設計的目的。 其分析過程首先由 C-FLOW 的輸出檔中,定義出可數量化的品質評估參數,進而建立澆口位 置的求解目標函數, 隨後再以最佳化方法中之模擬退火與爬山演算法 (simulated annealing-hill climbing algorithm-SANHIL) 結合 C-MOLD, 並使其能疊代連續執行到求 得最適澆口位置為止。最後,利用本文結合模擬退火與爬山法所發展出之膜片澆口位置設計 系統,求證平板膜片澆口之最佳位置設定,經由分析發現其結果與利用波前面積變異判定平 衡流動性的結果相符合,除可證明本數學模式之正確性與合理性外,因只需藉由 C-MOLD 之 第二層分析,就可決定最佳澆口位置,而不需耗費大量時間於第三層的分析上,大幅提高其 功效。 |
英文摘要 | By applying the character of balanced flow and considering the character of balanced flow, an integrated variance performance parameter facilitating to solve the gate location model is established. Various flow patterns are evaluated. Along with the Optimal design theorem, a design system for film gate location is developed to find the optimal gate location so as to reach the goal of automatized design with CAE. From the C-Flow output file, the quantitative quality par by applying the C-Flow of the C-Mold software and parameters are defined and the objective function for gate location is established. Then the simulated annealing-hill climbing algorithm, called as SANHIL, is combined with C-MOLD to obtain the optimal gate location by successive iterations. Finally, the design system for film gate location developed by the SANHIL is applied to verify the optimal location of the fil gate for the plate. The similar result was obtained ocmpared with that from the determination of balanced flow character based on melt front advancement. This verifies not only the model but also the effectiveness of the analysis process since the optimal gate location could be obtained during the second layer analysis of C-MOLD without the third layer analysis, which would take a lengthy time. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。