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題名 | An Observation of Oxygen Precipitation Retardation Phenomenon Induced by 450。C Anneal in Czochralski Silicon=450。C退火對Cz矽晶內氧凝聚遲滯現象所造成的影響 |
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作者 | 貢中元; 徐瑋; 劉進明; Kung, C. Y.; Hsu, W.; Liu, J. M.; |
期刊 | 興大工程學報 |
出版日期 | 19970600 |
卷期 | 8:2 1997.06[民86.06] |
頁次 | 頁21-29 |
分類號 | 440.34 |
語文 | eng |
關鍵詞 | 氧凝聚遲滯; 氧凝聚物; 二溫階退火; 三溫階退火; 微觀結構; Oxygen precipitate; Precipitation retardation; Rod-like defect; Three-step anneal; Two-step anneal; Silicon; |
中文摘要 | 本文以二溫階(450℃-1000℃)和三溫階(1150℃-450℃-1000℃)退火實驗來研 究 Cz 矽晶內的氧凝聚行為。在二溫階的實驗中觀察到很明顯的氧凝聚遲滯現象,然而在三 溫階實驗中氧凝聚遲滯現象則不明顯。在三溫階實驗第一步驟 1150 ℃的高溫退火,會使氧 凝聚遲滯現象在較短的孕核時間內發生。 我們發現矽晶內的微觀缺陷隨著 450 ℃的孕核時 間而改變。二溫階與三溫階退火所產生的微觀缺陷隨 450 ℃退火時間的變化是十分類似的 。 |
英文摘要 | Two-step(450℃-1000℃)and three-step (1150℃-450℃-1000℃)annealing experiments were carried out to study oxygen percipitation behavior in Czochralski silicon. A distinct retardation of precipitation was observed during the two-step anneal,while the retardation during the three-step anneal was less pronounced. With the three-step anneal, the first hight temperature 1150 ℃ anneal in N �� ambient caused the retardation to occur at shorter nucleation times. The microstructure characteristics as function of uncleation ( 450 ℃) anneal time were similar in the two-step and three-step annealed samples. |
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