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題名 | Analysis of Spacer Width and Source-Drain Doping on PMOS Characteristics |
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作 者 | 梁瑛心; | 書刊名 | 南開學報 |
卷期 | 1 1996.06[民85.06] |
頁次 | 頁177-189 |
分類號 | 448.5 |
關鍵詞 | 閘極的空間寬度; 汲極邊上淡濃度的佈植; 飽和電流; 抵補電流基體電流; Spacer width; Source-drain doping; Substract current; Offset current; Drain saturation current; |
語文 | 英文(English) |
中文摘要 | 本論文乃針對製程上的兩個參數,閘極兩邊的空間寬度參數值,以及源極和汲極 邊上較淡濃度的佈植參數值;對飽和電流,抵補電流,基體電流的影響。透過軟體的模擬結 果,找出基體電流小於1微安,抵補電流小於1微微安,以及為最大的飽和電流情況值,並找 出主要影響元件效能的製程參數。 |
英文摘要 | The main purpose of this simulation experiment is to control two fabrication parameters of spacer width and source-drain doping. For spacer has critical impact on substract current (Isub) and offset current(Ioff), but impact from source-drain doping is not significant. When taking several spacer and source-drain doping parameters, according to the simulation results, finding substract current less than 1 micro ampere, offset current less than 1 pico ampere, and saturation current of drain is the largest one. There will has tradeoff So, this paper try to find what is the main variance to influence them, and optimized will be found by simulation results. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。