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題名 | IGBT串聯技術之研究= |
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作者 | 陳建富; 魏炯權; 林俊男; |
期刊 | 電力電子技術 |
出版日期 | 19951000 |
卷期 | 29 1995.10[民84.10] |
頁次 | 頁15-32 |
分類號 | 448.532 |
語文 | chi |
關鍵詞 | 串聯技術; IGBT; Serial methods; RCD snubber; |
中文摘要 | 絕緣閘雙載子電晶體(IGBT)為近來新開發的一種功率元件,其結合了功 率金氧半場效電晶體及功率雙載子電晶體的優點,而被廣泛地應用。本文引用絕 緣閘雙載子電晶體巨觀模型,並以模擬軟體設計中心(Design Center)建立此模型。 為增加絕緣閘雙載子電晶體可使用之電壓範圍,本文根據已建立的絕緣閘雙載子 電晶體模型,進行的串聯方法之模擬。為使各串聯絕緣閘雙載子電晶體元件之分 壓均勻,本文發現在串聯的絕緣閘雙載子電晶體上並聯一RCD緩衝器及一適當的 均壓電阻,即可達到良好的均壓效果;並經由實驗證明本文所提方法確可達到均 壓的目的。 |
英文摘要 | The IGBT is a new developed device in recent years, and is a hybrid power devicethat combines the advantages of a POWER MOSFET and a BJT. Because of theadvantages of IGBTs, they have wide applications in many fields. In this paper, a practical IGBT macro model is used and built by simulation software Design Center. Toextent the rating ranges of voltage of IGBT, the possible serial methods are simulatedby the built IGBT model. It is found that the voltage sharing can be get to balance byadding a RCD snubber and an adequate balancing resistor in each IGBT. From experimental results, the serial techniques are proved that the voltages of IGBTs in seriescan be balanced. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。