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題名 | 摻矽砷化鎵單異質接面紅外線發光二極體之最佳化磊晶生長= |
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作者 | 藍山明; 呂俊昌; 吳建羲; 饒嵩山; |
期刊 | 材料科學 |
出版日期 | 19940300 |
卷期 | 26:1 1994.03[民83.03] |
頁次 | 頁38-45 |
分類號 | 337.472 |
語文 | chi |
關鍵詞 | 紅外線發光二極體; 摻矽砷化鎵; 單異質接面; IRED; Silicon-doped GaAs; Single-heterojunction; |
中文摘要 | 採用液相磊晶生長技術研製摻矽砷化鎵單異質接面紅外線發光二極體 (GaAs:Si SHIREDs),其元件結構為p-Ga��-xAlxAs:Mg/p-GaAs:Si/n-GaAs:Si/n�� -GaAs:Si(基板),本文主要目的是尋求最佳化磊晶生長條件,使二極體的相對輻 射強度達到最高值,實驗結果發現,影響二極體相對輻射強度的參數,依序為p-Ga ��-xAlxAs:Mg層的表面X值與最初X值及其載子濃度、n��-GaAs:Si基板的腐蝕坑 密度、n-GaAs:Si層與p-GaAs:Si層的厚度,當在最佳化磊晶生長條件時,GaAs:Si SH-IRED的相對輻射強度為傳統型GaAs:Si HOMO-IRED者的4倍,另外以鎂元素作 為Ga��-xAlxAs窗戶層的P-型摻雜,可將此層摻雜至較高濃度,以利其表面的歐 姆接觸製作。 |
英文摘要 | GaAs:Si single-heterojunction infrared emitting diodes (SH-IREDs) with p-Ga��-xAlxAs:Mg/p-GaAs:Si/n-GaAs:Si/n��-GaAs:Si(substrate) structure were prepared by LPE technology. The condi-tions for epitaxial growth of GaAs:Si SH-IREDs were studied to obtain the maximum emission intensity.It is found that the relative emission intensity depends on the surface x-value, the initial x-value, andthe carrier concentration of p-Ga��-xAlxAs:Mg layer, the etch pit density of n�� -GaAs:Si substrate, the thickness of n-GaAs:Si layer, and p-GaAs:Si layer. GaAs:Si SH-IREDs have exhibited the relativeemission intensity from 2 to 4 times as high as the conventional GaAs:Si homojunction infrared emittingdiodes (HOMO-IREDs). In order to reduce the bulk and contact resistance, the p-Ga��-xAlxAs windowlayer was doped with magnesium instead of silicon. |
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