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題名 | Band Structure of Local Pseudopotential Calculations Including Spin-Orbit Splitting Effects in Semiconductors=半導體能帶結構之侷限虛位能法含白旋﹣﹣軌道分裂效應的計算 |
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作者姓名(中文) | 朱惠美; 郭峻藝; | 書刊名 | 中原學報 |
卷期 | 20 1991.12[民80.12] |
頁次 | 頁28-39 |
分類號 | 337.472 |
關鍵詞 | 分裂效應; 半導體; 白旋; 侷限; 軌道; 能帶結構; 虛位能法; |
語文 | 英文(English) |
中文摘要 | 一種包含自旋一軌道交互作用而由半導體合金中價電子所見到之有效位能的能帶結構計算方法被描述說明。由於自旋一軌道偶合放應之考慮在觀測譜線能階分裂的結果是侷限虛位能法一般論述的精華所在,而在計算過程中所需之理論參數諸如虛位能形式因子則是取自於近期之電場(調制)反射係數譜線的量測數據。本論著是針對未含自旋一軌道與含自旋一軌道(偶合)效應在半導體鍺,砷化鎵,銻化鎵,砷化銦及銻化銦等材質上均做略為精確的數值計算,唯與實驗量測值比較之在銻化鎵及銻化銦材質中仍有0.18eV至0.22 eV之偏差。 |
英文摘要 | A calculation method of eigenvalues and band structure for including spin-orbit (s.o.) interaction in setting up the effective potential seen by the valence electrons in semiconductor alloys is described. It is essentially a generalization of the local pseudopotential to take into account of the splitting of the observed spectroscopic energy levels due to s. o. coupling. Data from recent measurements of electroreflectance spectra are used to obtain the theoretical parameters such as pseudopotential form factors. Calculated results for the eigenvalues, including critical-point assignments and bands structures, are given for diamond and zinc-blende type semiconductors Ge, GaAs, GaSb, InAs, and InSb, but comparing with experimental data there is sti11 a deviation of 0.18 e V to 0.22 e V in GaSb and InSb. |
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