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題 名 | 以不對稱摻雜造成的鋸齒型超晶格之開關特性研究 |
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作 者 | 蔡瀚輝; 蘇炎坤; 王瑞祿; | 書刊名 | 材料科學 |
卷 期 | 24:1 1992.03[民81.03] |
頁 次 | 頁73-76 |
分類號 | 440.33 |
關鍵詞 | |
語 文 | 中文(Chinese) |
中文摘要 | 本研究係藉MBE成長不對稱的摻雜型超晶格結構,並對其在偏壓下之開 關特性做一探討。結構為交替摻雜矽和鈹以形成六個週期的超晶格結構,且在兩 個摻雜層中間有一無摻雜層。二維的摻雜濃度為2*10�騁攘m�笐�(Be)和8*10�騁� cm�笐�(Si)。分別在T=77K及300K下觀測其開關特性。由於低溫時,熱電流不易 穿透,因此在77K時,切入電壓較300K來得高。由電流一電壓特性可得兩段S型 負電阻的區域。 |
英文摘要 | The asymmetric doping super lattice structure has been grown and investigated by MBE. This report analyzes the characteristics of the switch under bias. The super lattice has six periods and consists of alternative Si and Be delta-doped sheets with an un doped layer inserted between two neighboring doped sheets. The two-dimensional doping concentration is 2xl0�騁攘m�荼� for Be and 8x10�騁惡m �笐� for Si. The characteristics of switch has been observed under 77 and 300K. The switching voltage at 77K is higher than that at 300K due to low thermionic emission current. The I-V characteristic shows two S-shaped negative differential conductivity. |
本系統中英文摘要資訊取自各篇刊載內容。