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題名 | The Luminescence Properties of Eight Periods In₀.₂Ga₀.₈N/GaN Multiple Quantum Wells with Silicon Doping in the First Two to Five Barriers of Blue LEDs= |
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作者 | Cheng, Yung-chen; Chen, Meng-chu; |
期刊 | International Journal of Science and Engineering |
出版日期 | 20161000 |
卷期 | 6:2 2016.10[民105.10] |
頁次 | 頁1-8 |
分類號 | 448.59 |
語文 | eng |
關鍵詞 | InGaN/GaN quantum wells; QWs; Silicon (Si) doping; Soft confinement potential; Quantum-confined stark effect; QCSE; Auger processes; External quantum efficiency; EQE; |