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題 名 | 金屬有機前驅物--三甲基銦對氮化銦磊晶薄膜之光電及化學特性影響=Investigation of Trimethylindium Flow Rate on Electro-Optical and Chemical Properties of InN Epilayer Grown on GaN/Al₂O₃ Substrate |
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作 者 | 陳維鈞; 郭守義; 賴芳儀; 蕭健男; | 書刊名 | 科儀新知 |
卷 期 | 207 2016.06[民105.06] |
頁 次 | 頁55-70 |
分類號 | 448.552 |
關鍵詞 | 光電特性; 氮化銦磊晶薄膜; 三甲基銦; 發光二極體元件; |
語 文 | 中文(Chinese) |
中文摘要 | III-V族化合物半導體是目前發光二極體元件的主要材料,其中氮化銦具有許多優異光電特性,其窄光學能隙(0.65 eV)是III-V族氮化物材料延伸至紅外光區的重要特性之一。由於大多數的氮化銦都是以金屬有機化學氣相沉積製備,然而金屬有機前驅物(三甲基或三乙基)中含碳氫氧等元素,使得材料在成長過程中造成元素的摻雜而影響了其光電特性,因此本研究以三甲基銦為三族前驅物,並以金屬有機分子束磊晶系統成長氮化銦薄膜,同時進行其化學組態、雜質元素與光電特性之相關性分析,以了解金屬有機前驅物對成長氮化物之影響。由二次離子質譜儀與X光光電子光譜儀結果發現,前驅物三甲基銦中的碳與氫會隨著製程中摻入InN薄膜,其濃度會隨著三甲基銦流量增加而增加。相反地,薄膜中的氧含量會隨著三甲基銦增加而減少。並且在InN表面有高濃度的碳、氫與氧雜質,因此當表面經過HCl蝕刻後,V/III~1.81所成長之InN薄膜的電子濃度由5.57 × 1019 cm^(-3)降至3.31 × 1019 cm ^(-3)、遷移率則由192 cm^2/V-s提升至335 cm^2/V-s。光學性質部分透過光激發螢光光譜得知,近能帶邊緣放射訊號會隨著V/III流量比增加而藍移是因為Burstein-Moss effect,而高電子濃度大部分是氮空缺與雜質元素所貢獻,因此高載子濃度是造成光學吸收限藍移的主要原因。另外可知,三甲基銦前驅物在製程中會間接提高載子濃度,並影響光電特性。 |
英文摘要 | III-nitride is important material for high power light emitting diode (LED) devices. Specially, InN has attracted the most attention among the III-V nitrides because of its noticeable narrow band gap (0.65 eV), small effective mass and high electron mobility. Due to most InN films were prepared by MOCVD. However, metal-organic precursor often included carbon, hydrogen and oxygen. Therefore, we discussed the chemical and electro-optical properties of InN films grown on MOCVD-GaN lyaer with different trimethylindium flow rate. The InN films were characterized by secondary ion mass spectrometry, X-ray photoelectron spectroscopy photoluminescence and Hall effect. InN films were grown on MOCVD-GaN/Al_2O_3 substrate by plasma-assisted metal-organic molecular beam epitaxy. Secondary ion mass spectrometry and X-ray photoelectron spectroscopy results showed that carbon and hydrogen of trimethylindium precursor were incorporated during InN films growth. Also, the C and H concentrations increase with increasing trimethylindium flow rate. On the other hand, the oxygen concentration decreases with increasing trimethylindium flow rate. A relatively high C, H and O concentration exists near the surface of the InN film. Therefore, before etching, the fi lm exhibits the high carrier concentration of 5.57 × 10^(19) cm^(-3) and low mobility of 192 cm^2/V-s. After etching, the etched InN film exhibited a decreased carrier concentration of 3.31 × 10^(19) cm^(-3), increased electron mobility of 335 cm^2/V-s. Optical properties showed that the PL spectra exhibited blue-shift with increasing V/III flow ratio due to the Burstein-Moss effect. However, high carrier concentration was measured probably due to nitrogen vacancies and impurity contributed. Therefore, blue shift of the optical absortion is caused by high carrier concentration. |
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