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題名 | Preparation and Characterizations of Visible Light-responsive (Ag-In-Zn)S Thin-film Electrode by Chemical Bath Deposition= |
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作者 | Wu, Ching-chen; Cheng, Kong-wei; Chang, Wen-sheng; Lee, Tai-chou; |
期刊 | Journal of the Taiwan Institute of Chemical Engineers |
出版日期 | 20090300 |
卷期 | 40:2 2009.03[民98.03] |
頁次 | 頁180-187 |
分類號 | 460.02 |
語文 | eng |
關鍵詞 | Semiconductors; Chemical synthesis; X-ray diffraction; Optical properties; Electrochemical properties; |
英文摘要 | Abstract The thin-film form of (Ag–In–Zn)S quaternary semiconductor was prepared from acidic aqueous solutions. A low temperature and low cost chemical deposition method is presented. Grazing incidence X-ray diffraction, UV–visible spectroscopy, scanning electron microscopy, and X-ray photoelectron spectroscopy characterized the crystal phases, optical absorptions, surface morphologies, and compositions of the films. Samples are polycrystalline composed of ZnS/AgInS2/AgIn5S8 crystal phases. The thickness and optical absorption edge, depending on dipping numbers, lie between 0.58 and 1.29 μm and 2 and 3.1 eV, respectively. Photoresponse measurements were recorded by a scanning potentiostat in a standard three-electrode electrochemical setup under a 300 W Xe lamp illumination with the intensity of 100 mW/cm2. For the sample dipped in the chemical bath for three times (Sample C), the photocurrent density of 6.275 mA/cm2 was obtained in contact with K2SO3 and Na2S aqueous electrolyte with an applied potential of 1 V vs. SCE reference electrode. The corresponding maximum photon-to-current efficiency is 55% at λ = 500 nm. |
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