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題名 | 利用光激發光譜儀對a-Si:H/c-Si異質接面太陽電池鈍化層製程優化=Optimization of Crystalline Si Surface Passivation for a-Si:H/c-Si Heterojunction Solar Cells by Using Optical Emission Spectroscopy |
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作者姓名(中文) | 卓昀劭; 連水養; 張銀祐; 武東星; | 書刊名 | 真空科技 |
卷期 | 25:4 2012.12[民101.12] |
頁次 | 頁26-32 |
分類號 | 468.1 |
關鍵詞 | 電漿輔助化學氣象沉積系統; 異質接面太陽能電池; 本質氫化非晶矽薄膜; 光激發光譜儀; Optical emission spectrometer; Plasma enhanced chemical vapor deposition; Heterojunction solar cells; |
語文 | 中文(Chinese) |
中文摘要 | 本研究針對a-Si:H/c-Si異質接太陽能電池之鈍化層進行研究,以光激發光譜儀(Optical Emission Spectrometer; OES)來檢測高頻27.1 MHz電漿輔助化學氣象沉積(Plasma-enhanced Chemical Vapor Deposition; PECVD)系統製備本質氫化非晶矽薄膜過程中,探討SiH4與不同H2 流量(0 sccm-200 sccm)混和反應的自由基SiH*(414 nm)和H*(656、722、772 nm)分佈與濃度變化,藉由H*和SiH*比例控制調變本質非晶矽薄膜氫含量與沉積速率,並開發矩陣式OES自動量測系統,由腔體內不同位置自由基分佈的比例差異來判斷本質氫化非晶矽薄膜於厚度1-3 nm的穩定性優化,最後用於異質接面太陽能電池a-Si:H/c-Si鈍化層,由實驗結果發現當氫流量控制於120 sccm時薄膜氫含量為10.95 %,H*+SiH*自由基標準差總和為38.6,用於異質接面太陽電池元件其開路電壓0.613 V,短路電流34.39 mA/cm^2,理想因子0.73,元件效率為15.4 %。 |
英文摘要 | Radio-frequency (RF) parallel plate reactors are commonly used for plasma-enhanced chemical vapor deposition (PECVD) of hydrogenated amorphous silicon (a-Si:H) thin films. Non-intrusive plasma diagnostics for industrial RF parallel-plate reactors are useful for process optimization and monitoring. In this study, the a-Si:H thin films have been deposited in a parallel-plate 27.1 MHz radio frequency (RF) plasma reactor fed with hydrogen and pure SiH4. The plasma characterization has been performed by an optical emission spectrometry (OES). The main features of the spectra corresponded to the emission of SiH* and H* excited radicals, which directly came from dissociative excitation by electron collision processes with SiH4 and hydrogen. The effect of the hydrogen flow rates (0-200 sccm) on the plasma phase composition and on the film property has been investigated. We report experimentally the properties of heterojunction solar cells as a very thin amorphous silicon buffer layer with different hydrogen flow is inserted as an passivation layer. The experiment studies confirmed a distinct passivation effect by varying a-Si:H properties on a-Si/c-Si interface characteristics and thus the solar cell performance. The statistics appointed plasma stability and the a-Si/c-Si interface of the heterojunction solar cells were also studied. Finally, the heterojunction solar cell yielded an active area conversion efficiency of 15.4 % with an open circuit voltage of 0.613 V, a short circuit current of 34.39 mA/cm^2 and a fill factor of 0.73. |
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