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題名 | 植入第三元素對TiO₂光觸媒薄膜特性之影響=Effect of Third Element Implantation in Titanium Dioxide Thin Films to Improve the Photocatalytic Properties |
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作者 | 林建良; 翁克偉; 王自剛; Lin, Chien-liang; Weng, Ko-wei; Wang, Tzu-kang; |
期刊 | 遠東學報 |
出版日期 | 20120600 |
卷期 | 29:2 2012.06[民101.06] |
頁次 | 頁193-202 |
分類號 | 468.8 |
語文 | chi |
關鍵詞 | TiO₂光觸媒; 複合式PVD; 金屬電漿離子植入; Photocatalyst of TiO₂; Compound-type physical vapor deposition system; Metal plasma ion implantion; MPII; |
中文摘要 | 本研究是為了改善TiO2光觸媒的可見光吸收率,針對TiO2的光吸收範圍問題,採用複合式PVD系統備製TiO2光觸媒薄膜;製程中使用射頻濺鍍系統,製備高品質TiO2薄膜,再利用金屬電漿源離子植入技術(Metal Plasma Ion Implantion,MPII)於前階段備製之TiO2薄膜中植入第三元素V、Cr、Fe,降低TiO2的能隙值,使其光吸收範圍偏移至400~550 nm可見光範圍下進而達到提高可見光吸收率之目的。 |
英文摘要 | In this study, the effect of adding third elements such as Cr, V and Fe in titanium dioxide films to improve the photocatalytic properties is investigated. The samples were prepared using the compound-type physical vapor deposition system. The high quality titanium dioxide films were first fabricated by the radio-frequency sputtering system, and then the third elements such as Cr, V and Fe were injected into the titanium dioxide film using the Metal Plasma Ion Implanter. Those results show that the band gap of titanium dioxide with third elements is less than 3eV, so the absorption wavelength range of titanium dioxide can be shifted to 400-550nm. As a result, the activation and sunlight absorption rate of titanium dioxide with adding third elements is greatly increased. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。