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題 名 | 氮化鎵發光二極體在圖案化與無圖案化藍寶石基板磊晶成長之光電特性的研究=Electro-Optic Characteristics Study of Gan-Based Light-Emitting Diodes on Patterned Sapphire Substrate and Un-Patterned Sapphire Substrate with Epitaxial Growth |
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作 者 | 鐘明吉; 錢韋至; 余俊明; | 書刊名 | 遠東學報 |
卷 期 | 29:1 2012.03[民101.03] |
頁 次 | 頁1-6 |
分類號 | 448.552 |
關鍵詞 | 發光二極體; 氮化鎵; Light emitting diode; LED; GaN; |
語 文 | 中文(Chinese) |
中文摘要 | 目前氮化鎵系列之藍、綠發光二極體(LED)所用的藍寶石基板,由於,其磊晶與基板間之晶格常數的差異,造成其生長之磊晶層的發光效率一直有極大改進之空間。目前為了克服此一問題,已有多種磊晶製程技術 如:橫向生長技術(ELOG)、低溫緩衝層(LT)及凹槽結構…等,用以改善差排缺陷之存在,但這些方式都將使得磊晶技術複雜性提高;相對地,使得LED製造成本提升,不利於LED的市場應用層面。 因此,本文主要是以圖案化與非圖案化之藍寶石基板為研究重點,利用有機金屬化學氣相沉積設備(MOCVD)進行磊晶,再使用螢光光譜儀(PL)、雙晶格X-RAY繞射儀(DCXRD)、掃描式電子顯微鏡(SEM)、原子力顯微鏡(AFM)與晶粒製程(COW)後的檢測,針對LED之發光效率與電性品質進行研究。我們成功的使圖案化基板的亮度、電性比非圖案化基板提升。 利用圖案化基板生產可減少製程所需時間及成本,同時成長氮化鎵材料在圖案化基板上,可以有比無圖案化基板更佳的晶體品質,同時更有效地提高發光二極體的發光亮度,使得發光二極體能有更好的光電特性表現。 |
英文摘要 | This proposed is used the patterned sapphire substrates (PSS) and un-patterned sapphire substrates (UPSS) grew by metal organic chemical vapor deposition (MOCVD) to verify the electrical and optical properties of GaN epi-layers. Accordingly, the lattice mismatch between the GaN thin films and the sapphire substrates is 34%. Therefore, amount of treading dislocations (TDs) exist in the GaN crystalline during the GaN growth, that the performance of GaN-based light emitting diode (LED) will be decreased due to the quality of GaN thin films. Subsequently, the electrical, luminance properties and life time of the GaN-based LED will be degraded. To solve this problem, the epitaxial lateral overgrowth (ELOG), pendeo epitaxy (PE) and multistep method (MSM) was investigated. But the ELOG and PE methods need twice epitaxial growth to perform the LED structure. In this way, the cost of GaN LED will be increased and the process will take more time. To improve the GaN thin film quality and the cost of GaN-based LED, using patterned sapphire substrates instead of the un-patterned sapphire substrates is getting potential in the advance epitaxy processes of GaN. In order to investigate the influence of patterned sapphire substrates size dimensions, we used different dimension of pattern size to verify the optical and electrical properties of GaN-based LED. In this paper, all the samples were used the double crystal X-ray rocking curve (DCXRD), photon luminance (PL) and atomic force microscopy (AFM) to character the thin films quality of GaN on the patterned sapphire substrates. In this study, we have demonstrated the GaN-based LED with patterned sapphire substrates had successful grew by MOCVD. Accordingly, the results of GaN-based LED the optical and electrical characteristics had been great improved with the patterned sapphire substrates. |
本系統中英文摘要資訊取自各篇刊載內容。