查詢結果分析
來源資料
頁籤選單縮合
題名 | 沾筆式奈米蝕刻術應用於區域電漿共振陣列結構之製造=Gold Nano-array Manufactured by Dip Pen Nanolithography for Localized Surface Plasmon |
---|---|
作者 | 魏世忠; 吳子珩; 呂慧歆; 林啟萬; Wei, Shih-chung; Wu, Tzu-heng; Lu, Hui-hsin; Lin, Chii-wann; |
期刊 | 光學工程 |
出版日期 | 20120600 |
卷期 | 118 2012.06[民101.06] |
頁次 | 頁13-19 |
分類號 | 448.5 |
語文 | chi |
關鍵詞 | 陣列圓盤; 沾筆式奈米蝕刻術; 電子束微影術; 有限差分時域; 表面電漿共振; Disc array; Dip-pen nanolithography; DPN; Finite-differential-time-domain; FDTD; Surface plasmon resonance; SPR; |
中文摘要 | 以半徑兩百奈米的陣列圓盤及七十五奈米的點陣列為例,本文介紹利用沾筆式奈米蝕刻術進行奈微米結構製作及開發。此一方法具有低設備需求及製作快速等優勢,可作為現行電子束微影術之替代技術。本文結合暗視野散射光譜及有限差分時域分析,對製作出來的結構進行表面電漿共振波長分析。散射光譜顯示,兩種結構的共振波長分別為665奈米及622.8奈米,與有限差分時域分析計算結果一致。結合光譜與分析技術,本文展示了沾筆式奈米蝕刻術在太陽能、光電子元件及生醫技術的研發上之潛在價值。 |
英文摘要 | Herein, we demonstrate the advantage of Dip-Pen Nanolithography (DPN) as a research and design tool for metal nano-structure fabrications. Two distinct gold nano-structures, a disc array of 200 nm diameter and a post array of 75 nm diameter, arc fabricated by DPN/etch method and reported in this article. The surface plasmon resonance (SPR) frequencies, of both structures, are measured with Dark field scattering microscopy to be 665.0 and 622.6 nm for disc and post array respectively. The results from spectrum coincide nicely with the simulation from the Finite-Differential-Time-Domain (FDTD) analysis. Our report demonstrate that the DPN, together with analysis methods, is of high potential in developing photonic circuit, solar cell and biomedical devices, judging from the rapid and cost-competitive nature of the technology. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。