頁籤選單縮合
題名 | 具粗化及高反射鏡面基板之高效率氮化鎵發光二極體之研製=Investigation of High-Efficient GaN Light-Emitting Diodes with Roughened Surfaces and High Reflectivity Mirror Substrate |
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作者 | 洪瑞華; 謝創宇; 廖子維; 武東星; Horng, Ray-hua; Hsieh, Chuang-yu; Laio, Tzu-wei; Wuu, Dong-sing; |
期刊 | 光學工程 |
出版日期 | 20081000 |
卷期 | 103 2008.10[民97.10] |
頁次 | 頁22-29 |
分類號 | 448.552 |
語文 | chi |
關鍵詞 | 圖案化基板; 雙面粗化; 磊晶薄膜轉移; 取光率; Patterned substrate; Double-sides roughening; Epilayer transferring technology; Light extractio; |
中文摘要 | 本文主要利用圖案化基板、雙面粗化(n-GaN, p-GaN),並結合低溫黏貼技術將磊晶薄膜轉移於高反射鏡面之矽基板,進而製作具高散熱與高取光率之高效率氮化鎵發光二極體。文中將針對粗化製程對取光率之影響作一詳盡之探討。 |
英文摘要 | This paper utilizes the patterned substrate, double-sides roughening (n-GaN and p-GaN), and epilayer transferring technology to transferring the epilayer to high reflectivity mirror/Si substrate to fabricate the high thermal conductivity and high efficiency GaN emitting diodes (LEDs). The effect of texturing process on the light extraction of LEDs will be discussed in detail. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。