頁籤選單縮合
題名 | Cross-die BISR Design for the 3D-stacked Wide-I/O DRAM=三維堆疊Wide-I/O動態隨機存取記憶體之跨層自我修復架構設計 |
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作者 | Wu, Ming-hsueh; Luo, Kun-lun; Hsu, Chun-lung; Bai, Bing-chuan; |
期刊 | 電腦與通訊 |
出版日期 | 20141200 |
卷期 | 160 2014.12[民103.12] |
頁次 | 頁85-87 |
分類號 | 471.651 |
語文 | eng |
關鍵詞 | Wide-I/O DRAM; Cross-die; BISR; RCU; |
英文摘要 | A cross-die built-in self-repair (BISR) design for the 3D-stacked Wide-I/O DRAM is presented in this paper. The redundant control unit (RCU) of the proposed design acts as a lead role to simultaneously support self-die fault repair and cross-die fault repair. A logic die and 2 memory dies (MDs) stacking configuration is used to play a dedicated circuit to demonstrate the feasibility of the proposed design. Compare with the method that without cross-die fault repair scheme, the proposed design can catch relatively superior performance in yield upgrade with tiny extra area overhead penalty. |
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