頁籤選單縮合
題 名 | Log-Scale Method with Equivalent Circuit Model in Semiconductor Device Simulations |
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作 者 | Li, Szu-Ju; Ho, Chi-Hon; Liao, Chien Nan; Tsai, Yao-Tsung; | 書刊名 | 中國工程學刊 |
卷 期 | 30:5 2007.07[民96.07] |
頁 次 | 頁843-846 |
分類號 | 448.5 |
關鍵詞 | Equivalent circuit model; Device simulation; Log-scale method; |
語 文 | 英文(English) |
英文摘要 | Semiconductor device simulations sometimes have to solve for large-scale and small-scale variables at the same time, especially with density-gradient models and hydrodynamic models. The usual way is to use the scaling factors, but scaled variables are still not of the same order of magnitude. We propose a log-scale method to make all variables of similar orders without scaling factors. All variables in similar orders of magnitude will help Newton-Raphson iterations to easily converge in device simulations. We use the divergence theorem of Gauss to discretize Poisson's and continuity equations, using the element-by-element method and develop an equivalent circuit model. The electron and hole concentrations are presented for a diode and an MOS capacitor by using the log-scale method and the equivalent circuit model. The numerical results show the great capability of the equivalent circuit model with log-scale method. |
本系統中英文摘要資訊取自各篇刊載內容。