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題 名 | 不同矽膜預熱溫度之熔化時間研究與分析=Temperature Dependence of Melt Duration of Silicon Thin Films during XeF Excimer Laser Crystallization |
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作 者 | 郭啟全; 葉文昌; 李箕峰; 鄭正元; | 書刊名 | 明志學報 |
卷 期 | 39:1 2007.06[民96.06] |
頁 次 | 頁19-25 |
分類號 | 440.12 |
關鍵詞 | 矽膜液相持續時間; 試片預熱; 光學檢測; Melt-phase duration; Substrate heating; Optical measurements; |
語 文 | 中文(Chinese) |
中文摘要 | 由於擁有大晶粒尺寸之多晶矽膜才可以製作出性能優良之低溫多晶矽薄膜電晶體。依據理論公式分析,多晶矽膜之晶粒尺寸大小受到準分子雷射照射熔化後之成核時間息息相關。因此本研究以試片預熱的方式來提升矽膜熔化時間,並運用線上光學檢測系統來檢測矽膜之熔化時間。結果顯示,試片隨著預熱溫度的提高,其矽膜熔化時間將隨之提高,此實驗結果符合理論公式之預測。當矽膜厚度為 50nm在 500℃預熱溫度,其矽膜最長熔化時間為 480ns,約試片置於室溫之最長熔化時間之2.22倍;當矽膜厚度為 90nm在 500℃預熱溫度,其矽膜最長熔化時間更高達到 711ns,約試片置於室溫之最長熔化時間之2.06倍,並於超級橫向長晶區域發現長達 3μm之晶粒。 |
英文摘要 | Preheating the substrate for silicon thin films in excimer laser crystallization will be shown theoretically and experimentally to be effective in enhancing of grain size of polycrystalline silicon. The melt-phase duration of the silicon thin films preheated by various temperatures ranging from100℃ to 500℃ were experimentally investigated during XeF excimer laser crystallization by time-resolved optical reflectivity measurements. The longest melt-phase duration for amorphous silicon thin film of 50 nm and 90nm thick are 480ns and 711ns, respectively. The diameter of disk grain in the super lateral growth (SLG) regine as large as 3μm was successfully fabricated by a single shot XeF excimer laser irradiation for 90nm thick silicon thin films at a substrate temperature of 500℃. |
本系統中英文摘要資訊取自各篇刊載內容。