頁籤選單縮合
題 名 | Back-end-of-line Defect Analysis for Rnv8T Nonvolatile SRAM=針對Rnv8T非揮發性靜態隨機存取記憶體於後段製程中之錯誤缺陷分析 |
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作 者 | Bai, Bing-chuan; Luo, Kun-lun; Chen, Chen-an; Chen, Yee-wen; Wu, Ming-hsueh; Hsu, Chun-lung; Cheng, Liang-chia; Li, Chien-mo; | 書刊名 | 電腦與通訊 |
卷 期 | 160 2014.12[民103.12] |
頁 次 | 頁68-73 |
專 輯 | 嵌入式系統設計技術專題 |
分類號 | 471.651 |
關鍵詞 | Nonvolatile SRAM; Defect-based testing; Rnv8T; RRAM; Back-end-of-line; |
語 文 | 英文(English) |
英文摘要 | Rnv8T nonvolatile SRAM combines conventional SRAM and resistive RAM to provide both fast access speed and data retention. Conventional test methods for volatile SRAM or resistive RAM are not suitable for nonvolatile SRAM. Because of the connected structure of the nonvolatile SRAM, the volatile and nonvolatile parts of a nonvolatile SRAM could not be tested independently. This paper analyzes the defective behavior of the Rnv8T nonvolatile SRAM based on simulations after injecting defects. Simulation results showed that the injected defects caused stuck-at and transition faults which escaped from conventional March tests. Based-on the defective behavior and circuit operations, a straightforward test algorithm is proposed to detect the escaped faults. |
本系統中英文摘要資訊取自各篇刊載內容。