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題名 | 氮子鎵光子晶體缺陷模態=GaN Photonic Crystals Defect Mode |
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作者姓名(中文) | 張利銘; 侯佳宏; 丁于真; 陳啟昌; 許哲隆; 張正陽; 李建階; 陳冠廷; 綦振瀛; | 書刊名 | 光學工程 |
卷期 | 97 2007.03[民96.03] |
頁次 | 頁60-64 |
分類號 | 448.552 |
關鍵詞 | 光子晶體; Photonic crystals; |
語文 | 中文(Chinese) |
中文摘要 | 本論文中,我們利用氮化鎵二維光子晶體結構在平面上製作共振腔,有效抑制二維平面上之自發輻射,使光有效侷限於結構中缺陷的位置,並在室溫下架設微光致螢光系統(μ-PL),成功量得氮化鎵光子晶體之缺陷模態。當入射光能量□0.7μJ時,可使氮化鎵二維光子晶體結構被激發,產生中心波長為372nm之共振模態。 |
英文摘要 | In this study, photonic crystals have been designed, fabricated, and characterized in GaN bulk materials. The energy dependent measurement showed that the emission peak width can be significantly reduced as the pumping pulse energy was larger than 0.7μJ at room temperature. The mode at the wavelength of 372 nm emitted from the defect due to the structure disorder unintentionally introduced during the fabrication process of the GaN photonic crystals can be obtained. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。