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題名 | High-Q GaN-Based Micro-cavity Light Emitting Diodes=高Q值氮化鎵微共振腔發光二極體 |
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作者 | 高宗鼎; 高志強; 林立凡; 盧廷昌; 郭浩中; 王興宗; Kao, Tsung-ting; Kao, Chih-chiang; Lin, Li-fan; Lu, Tien-chang; Kuo, Hao-chung; Wang, Shing-chung; |
期刊 | 光學工程 |
出版日期 | 20070300 |
卷期 | 97 2007.03[民96.03] |
頁次 | 頁53-59 |
分類號 | 448.552 |
語文 | eng |
關鍵詞 | 氮化鎵; 微共振腔; 發光二極體; GaN; Micro-cavity; Light emitting diode; |
中文摘要 | 在這篇文章中,我們成功地製作出高Q值氮化鎵微共振空發生二極體元件並展示其高輝度的特性。此元件包含了25對氮化鎵/氮化鋁布拉格反射鏡(R=98%)和8對二氧化矽/氧化鉭布拉格反射鏡(R=99%)以及氮化鎵銦/氮化鎵主動層,此元件在1-毫安培的電流注入下,發光波長在465.3nm,且展現一非常窄的半高寬(~0.52nm),並由此可計算出此元件的Q值高達895。除此之外,此元件在不同大小的電洚注入下,可以由發光頻譜看出此元件發光波長的高穩定度,此說明了其發展電激發氮化鎵面射型雷射之可行性與潛力。 |
英文摘要 | We report the fabrication and demonstration of a high-Q GaN-based micro-cavity light-emitting diode (MCLED) with super-luminescence characteristics. The GAN MCLED composed of a 25-pairs high reflectivity (98%) GaN/A1N distributed Bragg reflector (DBR) and an 9-paris SiO2/Ta2O5 dielectric DBR (99%) with a 3λ InGaN/GaN active region showed a very narrow line-width of 0.52nm, corresponding to a cavity Q value of 895 at the driving current of 10 mA and a dominant emission peak wavelength at 465.3 nm. The super-luminescence behavior was observed as the emission line-width continued to decrease with the increasing injection current. In addition, the emission wavelength was kept almost invariant as vary the injection current. The results in this report should be promising for developing a number of high performance light emitters, including GaN-based VCSELs. |
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