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題 名 | 反及閘快閃記憶體壓縮頁配置策略之探討=A Study of the Allocation Policy of Compression Page for NAND Flash Memory Systems |
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作 者 | 黃文增; 陳俊達; 陳彥勝; 陳錦杏; | 書刊名 | 臺北科技大學學報 |
卷 期 | 38:2 民94.09 |
頁 次 | 頁13-22 |
分類號 | 471.6511 |
關鍵詞 | 反及閘快閃記憶體; 嵌入式系統; 壓縮演算法; 快閃壓縮層; Nandflash; Embedded system; Compression algorithm; Flash compression layer; |
語 文 | 中文(Chinese) |
中文摘要 | 在移動裝置或嵌入式系統中,儲存裝置必須具有體積小、容量大、重量輕、非揮發性及耐震等特性,而反及閘快閃記憶體即為目前最常用的儲存裝置之一。但由於記憶體容量有限且昂貴,就單位記憶體費用而言,比傳統式硬碟昂貴約數十倍甚至百倍;因此,如何增加反及閘快閃記憶體儲存空間,是一值得探討的議題。本論文中,我們使用改良式的快閃壓縮層,配合X-RL〔5,8-9〕的硬體壓縮演算法,以避免壓縮所產生的額外負擔及降低被壓縮資料頁內部破碎程度,以提高壓縮率;而在讀取方面,由於我們採用一種連續的記憶體配置方式,可以改善如文獻〔9〕中檔案存取所造成的冗長時間,使得反及閘快閃記憶體的壓縮方式更具實用價值。 |
英文摘要 | In future portable equips or embedded systems, the storage devices must have the characteristics of the small physical size, great capacity, light power consummation, light weight, not volatility, and enduring vibration. The NAND type flash memory, briefly denoted by NandFlash, is one of the often used store equips. For the unit price, its cost is more expensive than the traditional H.D. about decuple to a hundredfold, since its storage space is limitation. Therefore, it is a study topic issue how to increase the storage space of nandFlash. In this paper, we use the improved compression layer for NanaFladh, which can be concert with the X-RL [5,8-9] hardware algorithm, to avoid overhead and reduce the internal fragmentation degree of the compressed data pages. Hence, it can promote the compression rate. At the reading phase, we use the consecution memory allocation method, which can improve the superfluous time caused by file access [9]. Therefore, our compression algorithm is meaningful and practical in embedded system applications. |
本系統中英文摘要資訊取自各篇刊載內容。