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題名 | Thermal Effect and Frequency Response Analyses on Heterojunction Bipolar Power Transistor=異質結構雙載子功率電晶體之熱效應與頻率響應分析 |
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作者姓名(中文) | 嚴考豐; 楊汎美; | 書刊名 | 南臺工商專校學報 |
卷期 | 21 1995.04[民84.04] |
頁次 | 頁1-9 |
分類號 | 448.552 |
關鍵詞 | 異質結構雙載子電晶體; 熱不穩定性; 頻率嚮應; Heterojunction bipolar transistor; Thermal instability; Frequency response; |
語文 | 英文(English) |
中文摘要 | 由於高速與電流能力,砷化鎵鋁/砷化鎵異質結構雙載子電晶體已經被使用於微波 與數位電路上。本文中,電晶體的載子傳輸將以一數值模型來加以分析。對於元件操作、增 益、截止頻率與最大振盪頻率之三項優值也有計算,另外由於砷化鎵具有一低熱傳導率,所 以熱效應對電晶體所產生之不穩定性將會增高接面溫度,甚至導致電晶體燒毀。因此,熱效 應對接面溫度,電流╱電壓特性與頻率嚮應將以一熱模型來加以探討。 |
英文摘要 | The heterojuncton bipolar transistors(HBT) based on Npn AlGaAs/GaAs material system have attracted considerable attention for microwave and digital application due to their high speed and high current capabilities. In this paper, a numerical model based on the Npn AlGaAs/GaAs HBT structure for the carrier transport is presented. Three figures of merit on device operation, current gain, cutoff frequency, and maximum oscillation frequency are calculated. Besides, thermal instability plays an important role on power HBT resulted from the low thermal conductivity in GsAs. The generated heat will increase the junction temperature and cause self-destruction. Therefore, the thermal runaway study of the junction temperature, I/V characteristics and frequency response using an analytical thermal model is described. |
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