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題名 | 砷化鎵異質介面雙極性電晶體元件隔離之離子植入分析研究=Design of Experiment on GaAs HBT Device Ion Implantation Isolation |
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作 者 | 吳玉祥; 林文豐; | 書刊名 | 中華技術學院學報 |
卷期 | 29 2003.12[民92.12] |
頁次 | 頁67-81 |
分類號 | 448.552 |
關鍵詞 | 砷化鎵; 異質介面雙極性電晶體; 實驗設計; 田口方法; 離子植入; 信號雜音比; GaAs; HBT; Hetero-junction bipolar transistor; DOE; Design of experiment; |
語文 | 中文(Chinese) |
中文摘要 | 離子植入法被使用在1um和2um HBT元件間的隔離,以五道不同劑量與能量的條件,進行離子植入來隔離各元件的主動區域,原先是以數值模擬方式得到的離子植入參數,其測得的隔離漏電流約為45Na,因此採用田口式實驗設計的方法,可以找出最佳的離子植入條件,亦即可得到較小且均勻度一致的隔離漏電流,實驗中是以L9矩離的直交設計,來規劃四個因子與各絡條件,分別在晶片上植入不同條件的離子,然後再量測隔離漏電流,經由y值反應分析與SN計算的結果,可得到一組最佳的離子植入條件,隔離漏電流可降低為23nA。 |
英文摘要 | Implantation isolation is used in lum and 2um HBT device isolation technologies. Five implant dose and energy are used to isolate deep active region. The original dose and energy conditions were chosen by the implant simulation tool, however, we found that the isolation leakage current was about 45nA. Therefore, a DOE with Taguchi method was utilized to find the optimum implant condition for achieving lower and consistent isolation leakage current. L9 matrix of orthogonal design was based on 4 factors with 3 levels to process wafers and measure the leakage current. After the response analysis (y value) and SN (Signal Noise) calculation, we came out with an optimum implant condition to get the minimum leakage current about 23 nA. |
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