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題 名 | Distribution of Components in Si-Ge Bulk Crystals Grown by the Zone Levelling Method |
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作 者 | Varilci,A.; Kucukomeroglu,T.; Azhdarov,G. Kh.; | 書刊名 | Chinese Journal of Physics |
卷 期 | 41:1 2003.02[民92.02] |
頁 次 | 頁79-84 |
分類號 | 330 |
關鍵詞 | |
語 文 | 英文(English) |
英文摘要 | The component distribution in Si-Ge bulk crystals grown by the zone leveling technique has been analyzed theoretically, with a view to estimating the operational parameters for preparing mixed crystals with the desired uniform and/or graded composition profiles. A numerical model, using the equilibrium distribution coefficient defined in the phase diagram, capable of predicting the component redistribution in Si-Ge crystal at any stage of the zone leveling growth, is proposed. Compositional profiles of Si-Ge crystals with a variety of operational parameters, such as the molten zone length and the initial ingot composition, are calculated and discussed. It was found that the Si concentration profile in Si-Ge crystal as a function of zone length changes considerably from fully graded to almost uniform along the growth direction. Obtained results allow the operational parameters for preparing Si-Ge mixed crystal to be estimated. |
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