頁籤選單縮合
題 名 | High Photo-Voltage Zinc Oxide Thin Films Deposited by DC Sputtering |
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作 者 | Samarasekara, P.; Nisantha, A.G.K.; Disanayake, A. S.; | 書刊名 | Chinese Journal of Physics |
卷 期 | 40:2 2002.04[民91.04] |
頁 次 | 頁196-199 |
分類號 | 337.472 |
關鍵詞 | |
語 文 | 英文(English) |
英文摘要 | The thin films of ZnO have been deposited on conductive glass substrates by DC sputtering. The sputtering parameters have been varied to obtain ZnO films with maximum open circuit photo-voltage measured in the electrolyte KI/I₂. A photo-voltage as high as 40.66 V/m² could be obtained for the film synthesized at the pressure of 6 mbar for a duration of 23.75 hours. These ZnO thin films can be used to absorb the short wavelengths in the ultraviolet (UV) region of the solar spectrum. |
本系統中英文摘要資訊取自各篇刊載內容。