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題名 | 退火氣氛及溫度對ATO薄膜影響之研究=The Effects of Annealing Atmosphere and Temperature on ATO Films |
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作 者 | 張佳媛; 姚寶順; 黃肇瑞; | 書刊名 | 真空科技 |
卷期 | 14:3 2001.10[民90.10] |
頁次 | 頁17-21 |
分類號 | 440.34 |
關鍵詞 | 退火; 氣氛; 溫度; ATO薄膜; 氧化銻錫薄膜; |
語文 | 中文(Chinese) |
中文摘要 | 氧化銻錫薄膜(Antinomy Doped Tin Oxide, ATO)內含有很高的載子濃度(~1020cm-3),且在可見光波長範圍內為透明的,為一透明導電薄膜,目前廣泛應用於電子及光電產業上。本研究利用射頻反應磁控濺鍍法濺射ATO薄膜於康寧玻璃1737F基材上,探討不同退火溫度及氣氛對ATO薄膜微結構及光電性質之影響。 實驗結果發現退火後之電性得到了明顯的改善,退火溫度越高,其電阻係數越低;其原因為退火造成晶粒成長,而載子濃度及移動率亦均隨退火溫度增加而上升。且在氮氣中退火較氧氣中可得較低的電阻係數,其中以氮氣中500℃退火1小時可得最低之電阻係數3.92×10-3Ω-cm。這樣的結果與晶界上氧的吸附有關。此外,本研究亦發現,退火後的ATO薄膜可提高近紫外光區的可見光穿透率。 |
英文摘要 | Antinomy doped tin oxide (ATO) films have been extensively used in electronic and opto-electronic applications because of their high carrier concentration, low electrical resistivity and high transmission in the visible range. In this study, ATO films were deposited on Corning glass 1737F by RF magnetron reactive sputtering with different oxygen partial pressures. The effects of annealing temperature and atmosphere on the composition, microstructure, surface morphology, conductivity and optical properties of ATO films were investigated. The results of conductivity measurements revealed that the resistivity became one to two orders of magnitude lower than those observed in as-deposited films after thermal annealing. The decrease in resistivity with annealing temperature is due to the increase in carrier mobility and concentration. Results also showed that films, after annealing at 500℃ 1 hour in nitrogen, of a low resistivity of 3.92×10-3Ω-cm and high transparency of 80% were obtained. This can be explained by the adsorption of oxygen onto the grain boundaries. In addition, the absorption edge moves toward lower wavelength after annealing. |
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