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題 名 | 我的風霜歲月 |
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編 次 | 1 |
作 者 | 巫永福; | 書刊名 | 臺灣文學評論 |
卷 期 | 1:1 民90.07 |
頁 次 | 頁20-35 |
分類號 | 782.88 |
關鍵詞 | 巫永福; |
語 文 | 中文(Chinese) |
英文摘要 | We present the thermal degradation mechanism of Cu/Au Schottky contacts to InGaP layer using I-V, XRD and TEM measurements. The I-V measurements reveal that the element Cu Schottky contacts to InGaP is degraded as the RTA temperatures reaches 500℃ for 1 minute. From the XRD and TEM measurements, it is attributed to the element Cu penetrating into the InGaP layer and forms a CuP2 alloy layer. Moreover, the CuP2 alloy thicknessis found to increase as the RTA temperatures ranging from 500℃ to 600℃. In according with the relationship between the CuP2 alloy thickness and annealing temperatures, the activation energy and interdiffusion constant between Cu and P atoms can be evaluated. The activation energy is 1.50eV and the intgerdiffusion constant is 1.18×103 and 1.55×104 nm2/s, for the annealing temperatures of 500℃ and 600℃, respectively. |
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