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檢索結果筆數(8)。 各著作權人授權國家圖書館,敬請洽詢 nclper@ncl.edu.tw
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題 名:
In戓Ga[fec5]P Grown by All Solid Source Molecular Beam Epitaxy:利用固態源分子束磊晶系統生長磷化銦鎵
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- 書刊名:
Proceedings of the National Science Council : Part A, Physical Science and Engineering
- 卷 期:
22:6 1998.11[民87.11]
- 頁 次:
頁805-810
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題 名:
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題 名:
An Algorithm to Extract Circuit and Physical Models of a-Si TFT:非晶矽薄膜電晶體電路模型及物理參數萃取之研究
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- 書刊名:
Proceedings of the National Science Council : Part A, Physical Science and Engineering
- 卷 期:
20:3 1996.05[民85.05]
- 頁 次:
頁294-303
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題 名:
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- 題 名:
- 作 者:
- 書刊名:
Proceedings of the National Science Council : Part A, Physical Science and Engineering
- 卷 期:
17:6 1993.11[民82.11]
- 頁 次:
頁428-432
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題 名:
Poly-Si Gettering Effect on the Quality of Silicon Epitaxial Films:以複晶矽處理法改進矽磊晶膜之品質
- 作 者:
- 書刊名:
Proceedings of the National Science Council : Part A, Physical Science and Engineering
- 卷 期:
8:1 1984.01[民73.01]
- 頁 次:
頁65-68
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題 名:
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- 作 者:
- 書刊名:
Proceedings of the National Science Council : Part A, Physical Science and Engineering
- 卷 期:
10:4 1986.10[民75.10]
- 頁 次:
頁335-351
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- 作 者:
- 書刊名:
Proceedings of the National Science Council : Part A, Physical Science and Engineering
- 卷 期:
11:2 1987.03[民76.03]
- 頁 次:
頁142-148
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- 題 名:
- 作 者:
- 書刊名:
Proceedings of the National Science Council : Part A, Physical Science and Engineering
- 卷 期:
11:2 1987.03[民76.03]
- 頁 次:
頁183-187
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題 名:
The Fabrication of GaAs Varactor Diode by LPE Method:液相磊晶成長法研製變容二極體
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- 書刊名:
Proceedings of the National Science Council : Part A, Physical Science and Engineering
- 卷 期:
8:3 1984.07[民73.07]
- 頁 次:
頁195-201
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題 名: