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題名 | 電漿化學蒸鍍硬質膜於工具上之技術開發=The Development of Plasma Chemical Vapor Deposition Hard Coatings on Tool |
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作者 | 林天財; 楊玉森; 涂瑞庭; 李新中; 卓廷彬; Lin, T. T,; Yang, Y. S.; Tu, T. T.; Li, H. C.; Cho, T. P.; |
期刊 | 鍛造 |
出版日期 | 19971100 |
卷期 | 6:4 1997.11[民86.11] |
頁次 | 頁9-22 |
分類號 | 472.16 |
語文 | chi |
關鍵詞 | 電漿化學蒸鍍; 碳化鈦; 薄膜; PCVD; TiN; ThinFilm; |
中文摘要 | TiN鍍膜之硬度高達HV2000以上,可有效的抵抗工具所產生之磨耗現象,提高使 用壽命, 於工具上蒸鍍 TiN 的技術已有 PVD 及 CVD 方法,然而 PCVD 技術為一新開發之 技術,主要是利用電漿來輔助化學氣相沈積,可將 CVD 之製程溫度降至 500 ℃左右,成長 TiN 時則通入 TiCl �瓷BN �砟� N �砥A本研究乃利用田口實驗計畫法成長 TiN 鍍膜於工具 鋼 SKH51 上,探討製程參數對鍍膜硬度, 成長速率,鍍膜組成等之影響,結果顯示,提高 製程溫度及加大放電電壓壓將有助獲得高硬度,高成長速率及低氯含量的鍍膜持性,若要得 到低的氧含量,則於低放電電壓及低製程溫度。 |
英文摘要 | TiN with high hardness of over HV2000 was effective to protect the cold work tool to avoid were loss and increase the lifetime. In general, the methods of tool coated with TiN were PVD and CVD technology. The paper try to use plasma chemical vapor deposition (PWD) to deposit TiN were PVD and CVD technology. The paper try to sue plasma chemical vapor deposition (PWD) to deposit TiN because PCVD was very different to PVD and CVD, and was a new developing technology. The main principle of PWD was assistant by plasma to enhance chemical vapor deposition in the result of decreasing process temperatjre down to about 500 ℃. The gas source of deposition TiN was TiCl ��,N �� and H ��,and the substrate was tool steel of SKH 51. The study method was assisted by taguchi method. The main purpose of this paper was discussed the film of hardness, growth rate and composition dependence on process parameters. The results shown that the characteristic of coatings with high hardness, high growth rat and low cloride contain deposited at high deposition temperature and high DC voltage. On the orther hand, deposition at low DC voltage and low deposition temperature was able to get low oxigen contains. |
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