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題 名 | Characterization of Metal-Oxide-Semiconductor Field Effect Transistor for Polypyrrole Prepared by Electrochemical Synthesis=以電化學法合成聚吡咯之金氧半場效電晶體特性 |
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作 者 | 郭欽湊; 楊惇傑; | 書刊名 | 大同學報 |
卷 期 | 28 1998.11[民87.11] |
頁 次 | 頁109-114+449 |
分類號 | 460.02 |
關鍵詞 | 電化學法; 聚吡咯; 金氧半場效電晶體; 苯磺酸; 電解質; MOSFETs; p-TSA; |
語 文 | 英文(English) |
中文摘要 | 在室溫下,於去離子水中以對苯磺酸(p-TSA)為電解質進行聚�p咯(polypyrrole)電化學聚合反應,並對其熱分解溫度、摻雜程度和導電度進行研究。另一方面,利用共軛導電性高分子具有之半導體特性,以電化學法製備金氧半場效電晶體(MOSFETs)。此Au/p-TSA摻雜Ppy/SiO��/Si/Au之MOSFETs呈現為一p-type電晶體,且MOSFETs的場效位移率隨電解質濃度的增加而增加,且隨著老化時間的增長而降低。以較低濃度的對苯磺酸所製備之MOSFETs,發現其Modulation具實用性。 |
英文摘要 | Polypyrrole (PPy) films were prepared at room temperature by electrochemical polymerization in deionized water, utilizing p-toluenesulfonic acid monohydrate(p-TSA) as supporting electrolyte. The thermodecomposition temperature, doping degree, and electrical conductivity were investigated. On the other hand, the semiconductor characteristics of the conjugated conducting polymers are utilized in the metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated by electrochemical synthesis. The MOSFETs of Au/p-TSA doped Ppy/SiO��/Si/Au exhibit p-type transistors. The field-effect mobilities of MOSFETs increase with an increase in the concentration of electrolyte and decrease with increasing aging time. The modulation of MOSFETs fabricated with lower concentration of p-TSA doped PPy exhibits practice. |
本系統中英文摘要資訊取自各篇刊載內容。