頁籤選單縮合
題名 | Optical Characterization of a Zn₀.₈₈Mg₀.₁₂S₀.₁₈Se₀.₈₂Epilayer on GaAs= |
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作者 | Chen,H. J.; Lin,D. Y.; Huang,Y. S.; Tu,R. C.; Su,Y. K.; Tiong,K. K.; |
期刊 | Chinese Journal of Physics |
出版日期 | 19980600 |
卷期 | 36:3 1998.06[民87.06] |
頁次 | 頁533-541 |
分類號 | 330 |
語文 | eng |
關鍵詞 | |
英文摘要 | We have performed the photoluminescence, piezoreflectance and contactless electroreflectance study of a Zn₀.₈₈Mg₀.₁₂S₀.₁₈Se₀.₈₂film, grown by molecular beam epitaxy on a (001) GaAs substrate, near the band edge in the temperature range between 15 and 300 K. The features related to the band-to-band excitonic and defect-related transitions of the material are observed and the nature of these features are discussed. In addition, the parameters that describe the temperature dependence of the interband transition energy and broadening function of the excitonic feature are evaluated. PACS. 78.66.-w - Optical properties of thin films, surfaces, and layer structures (superlattices, heterojunctions, and multilayers). PACS. 78.66.Hf - Ⅱ - Ⅵ semiconductor. |
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