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題 名 | 酸鹼離子感測場效電晶體ISFET元件之模擬與研究=Simulation and Study of the ISFET Devices |
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作 者 | 周榮泉; 郭文諒; | 書刊名 | 國立雲林技術學院學報 |
卷 期 | 6:3 1997.07[民86.07] |
頁 次 | 頁361-367 |
分類號 | 448.552 |
關鍵詞 | EIS系統; Stern電雙層模型; 吸附鍵結模型; 平能帶電壓; C-V特性曲線; EIS system; Stern electrical double layer model; Site-binding model; Flat-band voltage; C-V curve; |
語 文 | 中文(Chinese) |
中文摘要 | 傳統的MOSFET元件,是由外加閘極電壓產生電場,造成汲極和源極間通道的調變,來達成控制元件電流的目的。 而 ISFET 則是藉由電解液中離子的活性,來調變其汲極和源極間的通道,其係屬於離子感測元件。 MOSFET 元件的心臟部份,是其MOS(Metal-Oxide-Semiconductor)的電容結構。同理,ISFET元件的主要操作機制,是由EIS(Electrolyte-Insulator-Semiconductor)系統所決定。 本論文採用電雙層模型來描述EIS(Electrolyte-Insulator-Semiconductor)系統,並利用吸附鍵結模型(Site-Binding Model)再加上半導體物理方面的考量,來建立ISFET的數學模型。我們研究分別以SiO�粉PAl�烙�健穔晾t層材質時,由模擬EIS系統之C-V特性曲線的平能帶電壓(Flat-Band Voltage)位移量,以得知ISFET對不同pH值的響應。 我們使用Mathematica 2.2數學套裝軟體進行數值分析,可以較準確且快速地計算出所需的 EIS系統參數值。接著再利用電腦輔助電路設計軟體Design Center 6.0的ABM(Analog Behavior Modeling)功能,將EIS系統之數值分析結果配合Design Center內建的MOS元件模型,組合成一個ISFET元件模型。將此模型應用於電子電路中,以模擬分別以SiO�粉PAl�� O�健穔晾t層材質時,ISFET在整個電路系統中的工作情形,並作一比較。 |
英文摘要 | The electric field of the MOSFET device is formed by its applied gate voltage. Thus, the modulation of the channel between drain and source can control the device current. Instead, for the ISFET device, the modulation relies on ionic activity in the electrolyte. Therefore, the ISFET device can be regarded as a transistor that measures the phenomena occuring at the insulator-electrolyte interface through a field effect. The heart of the MOSFET device is the MOS capacitor structure. Similarly, the main mechanism of the ISFET device is the EIS (Electrolyte-Insulator-Semiconductor) system. In this paper, the Electrical Double Layer Model is used to describe EIS system; in addition, the Site-Binding Model and concept of semiconductor physics are considered when the ISFET mathematics model is set up. Moreover, we study the insulator layers are SiO�� and Al�烙�� materials respectively, the response of the ISFET to each specific pH value can be observed by the shift of the Flat-Band voltage reflected on C-V curve of the EIS system. As for the numerical analysis, Mathematica 2.2 is used to calculate the required EIS system parameters within a short period of time. These parameters combined with the ABM (Analog Behavior modeling) functions and the build-in MOSFET models of the CAD (Computer Aided Design) program--Design Center 6.0, are used to contribute the ISFET component circuit models. Circuit example using the developed ISFET model has been demonstrated to examine and compare the effects of different insulator on the circuit performance. |
本系統中英文摘要資訊取自各篇刊載內容。