頁籤選單縮合
題名 | Upper Critical Field of Granular SnGe Samples Near the Superconductor-to-Insulator Transition= |
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作者 | Lin, P. J.; Hsu, S. Y.; |
期刊 | Chinese Journal of Physics |
出版日期 | 20050600 |
卷期 | 43:3(2) 民94.06 |
頁次 | 頁662-665 |
分類號 | 337.472 |
語文 | eng |
關鍵詞 | |
英文摘要 | We have measured the upper critical field, Hc₂ (T ), in granular SnGe samples with normal state resistivities, ρN, that range from 0.3 mΩ cm to 0.5 Ω cm. The samples demonstrate an evolution from superconducting to insulating in transport with increasing disorder. The temperature dependence of Hc₂ shows a clear change in curvature between high ρN and intermediate ρN samples differing from the experimental results by Deutscher et al.. Our data is analyzed in terms of Ginzburg-Landau theory and grain structure induced disorder effect. The result is similar to the observation in high Tc superconductors that anisotropy induced fluctuation effect play an important role. |
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