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題名 | Temperature Rise in Water Droplet During CO[feaf]Laser Assisted Particle Removal=雷射輔助清潔矽晶片表面能量轉換媒溫度計算 |
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作者 | 李賢哲; | 書刊名 | 屏東師院學報 |
卷期 | 9 1996.06[民85.06] |
頁次 | 頁227-262 |
分類號 | 336.9 |
關鍵詞 | 雷射; 半導體; 污染防制; 能量轉換媒; 快速加熱; Laser; Semiconductor; Contamination control; Medium; Superheat; |
語文 | 英文(English) |
中文摘要 | 鑑於現代電子科技的日益精密,使得單位矽晶片上的電子元件密度大大提高。超大型積體電路(每晶片大於221、元件)的問世,促使體積小,速度快的運算機器,成為尖端科技的新寵。在體積小,密度高的生產需求下,更凸顯出電子元清潔之重要。這雷射清潔矽晶片的研究,主要運用雷射光子的能量一致性與單一波長之持性,並加入不造成二次污染的能量轉換媒(水),吸附在污染粒子周圍,當水份子吸收光子能量後,被快速加熱(superheat),而產生類似噴射引擎之效果,將粒子彈出表面。最近的實驗,成功的把1微米(10-6m)大小粒子,從矽晶片上去除(1微米相當於1百萬位元記憶體的生產需求)。 這雷射清潔技術可增加半導體生產的成功率,而且它使用不造成二次污染的能量轉換媒,若取代傳統化學清潔過程,能明顯的降低半導體工業對環境造成之污染。 |
英文摘要 | Laser assisted particle removal (LAPR) is an innovative technique capable of removing micron and submicron scale particles from solid surfaces. In LAPR, the contaminated substrates are dosed with water or other condensable gases which preferentially adsorb in the capillary-spaces under and around the particles. The dosed substrate is then irradiated with a pulsed CO2 laser causing explosive evaporation of the adsorbed water and propelling the particles off the substrate surface much like small rocket engines. In our experiments, LAPR was used to remove 9.5 pm A1203, 5 μm A1203 and 1 pm polystyrene particles from Si substrates. Removal threshold (Φth) measurements were obtained using a TEA CO2 laser at wavelengths of 9.6 and 10.6 gm. The temperature rise in the energy transfer medium (H2O) was calculated at the LAPR threshold suggesting that superheating of the water droplet is a reasonable mechanism for LAPR. |
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