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題名 | 利用RBS方法研究矽與金屬介面低溫退火時的遷移現象= |
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作者 | 黃勝良; 吳秀錦; 鍾世俊; 鍾運開; 徐武雄; 劉遠中; |
期刊 | 真空科技 |
出版日期 | 19940800 |
卷期 | 7:2 1994.08[民83.08] |
頁次 | 頁6-16 |
分類號 | 337.84 |
語文 | chi |
關鍵詞 | RBS方法; 低溫退火; 矽; 金屬介面; |
中文摘要 | 本工作利用RBS分析方法觀察矽與金屬介面因低溫退火所引起的遷移現象。矽晶片用化學方法清洗之後,以真空蒸鍍方法鍍厚度約1000A的金屬薄膜。由(100)矽晶片鍍金膜的退火觀察發現:(1)加熱至溫度160℃以上,就開始有矽原子向薄膜表面遷移。加熱溫度愈高,發生矽向表遷移的現象所需的退火時間愈短;同樣退火時間。遷移的量也愈多;(2)加熱溫度至∼200℃以上時,除了矽的遷移現象之外,金矽介面間還有互相混合的現象;同一溫度下,加熱時間愈長,混合深度愈深,混合的量也愈多;(3)矽的遷移量跟加熱時間的平方根成正比;(4)矽的遷移和金膜表面是否有氧或水分子的存在有很密切的關係;(5)同一加熱溫度下,在(100)矽晶片上的矽遷移率比(111)矽晶片大,兩者相差一倍左右。此外,我們也觀察矽鍍銀膜因低溫退火所引起的遷移現象,退火溫度達300℃時始有矽的遷移現象,銀矽介面間也有混合現象,而且在銀膜內矽自內表面均勻分佈至外表面。 |
英文摘要 | In this work, we use the RBS method to study the low temperature migration of Si through metal films. Si wafers were chemically etched before evaporation of metal films about 1000A thick. The investigations on the annealed (100) Si-Au samples, lead to the following results: (1) Si atoms migrate to the surface of the gold film at 160℃ or higher temperature. For higher heating temperature, the migration of Si occurs at shorter annealing time with higher migration rate. (2) At the temperature of 200℃ or higher, in addition to the migration of Si, intermix phenomenon also occurs between the Au-Si interface. For a given temperature, the amount and depth of this intermix increases with the heating time. (3) The migrating quantity of Si is proportional to the square root of the heating time. (4) The existence of oxygen and the moisture (H2O) strongly affect the migration of Si. (5) For the same heating temperature, the migration rate on (100) Si is greater than than on (111) Si by about a factor of two. For Ag-Si interaface, the migrating of Si begins at the temperature of 300℃ or higher, intermix phenomenon also occurs at this temperature except the Si concentration distributes uniformly throughout the Ag layer. |
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