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題名 | The Fabrication Methods of AlGaAs/ In Gap/Al GaAs Visible Laser With Transverse Junction Stripz Structure Grown By Liquid Phase Epitaxy=液相磊晶生成技術製造之橫向發光型砷化鋁鎵/磷化銦鎵/砷化鋁錠可見光雷射二極體 |
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作者 | 謝立人; 張連璧; |
期刊 | 海軍軍官學校學報 |
出版日期 | 19931200 |
卷期 | 3 1993.12[民82.12] |
頁次 | 頁73-85 |
分類號 | 448.552 |
語文 | eng |
關鍵詞 | 可見光; 生成技術; 砷化鋁錠; 砷化鋁鎵; 液相磊晶; 雷射二極體; 橫向發光型; 磷化銦鎵; |
中文摘要 | 砷化鋁鎵╱磷化銦鎵╱砷化鋁鎵雙異質可見光雷射二極體是以橫向發光型製作在 半絕緣基底一種結構。生長此雙異質雷射二極體元件是利用液相磊晶生長之技術並提供緩衝 層來解決砷化鋁鎵╱磷化銦鎵間之交互污染問題,另用氮化矽形成光罩再以電漿蝕刻成一百 微米寬之元件。 使用鋅擴散至P-N接面以減低雷射二極體中磷化銦鎵發光面積,如此一個以液相磊晶生 成技術製造之橫向發光型砷化鋁鎵╱磷化銦鎵╱砷化鋁鎵的可見光雷射二極體即可在室溫下 連續操作。 |
英文摘要 | A transverse junction stripe (TJS) structure is used to fabricate AlGaAs/InGaP/AlGaAs double hetero (DH) visible lasers on semi-insulating (SI) GaAs substrates. The use of a buffer solution during the liquid phase epitaxy (LPE) growth of AlGaAs/InGaP/AlGaAs DH wafers on Cr&O doped GaAs substrates, serves to suppress the AlGaAs/InGaP inter-facial contamination. An Si�衹�淬ilm mask is laid down on the epitaxial wafer surface by chemical vapor deposition (CVD), and subsequently etched by plasma to form a 100 μm wide stripe in <110> direction. A Zn transverse diffused on p-n junction effectively reduces the LD'S InGaP active region, and the continuous wave operation of the visible laser diodes at room temperature is this possible, which suggests that the TJS structure is suitable for the LPE growth of AlGaAs/InGaP/AlGaAs visible laser diodes. |
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