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題名 | A Modified Dielectric Model of Theoretical Calculations in Semiconductor for the GaAs₁-xPx Alloys=半導體砷化鎵磷合金之修正介電 (質) 模型理論計算 |
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作者 | 朱惠美; | 書刊名 | 中原學報 |
卷期 | 18 1989.12[民78.12] |
頁次 | 頁15-22 |
分類號 | 337.472 |
關鍵詞 | 介電質; 半導體; 合金; 計算; 砷化鎵磷; 模型理論; |
語文 | 英文(English) |
中文摘要 | 以修正介電(質)模型方法應用於砷化鎵-砷化磷合金系列之最低直接能隙值的計算,其理論計算是基於適當的假設即直接遷移能隙E₀約具有與其組成成份x成二次方形式的表示式,E₀(x)= A+Bx+CX²。 計算所得結果與經由電場調制反射係數量測(EER)法所得實驗數據比較之,發現該修正介電(質)模型方法其計算結果與實驗值非常吻合。 |
英文摘要 | The lowest direct band gap of a series of GaAs-GaP alloys were calculated by the modified dielectric model method. The theoretical calculations are made in suitable assuming that the direct transition band gap Eo energy has an approximately quadratic form which dependence on alloy concentration x, which can be expressed as E₀(x)=A+Bx+Cx². Calculated results are compared to experimental data by electroreflectance measurements and were found that, the modified dielectric model method gives a slightly good agreement with experiment. |
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