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題名 | 化學氣相蒸著(CVD) 反應之動力學與現象論 |
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作者 | 李源弘; 鍾啟東; | 書刊名 | 材料科學 |
卷期 | 18B:2 民75.12 |
頁次 | 頁96-107 |
分類號 | 440.2 |
關鍵詞 | 化學氣相蒸著; 動力學; 現象論; |
語文 | 中文(Chinese) |
中文摘要 | 本文在討論化學氣相蒸著(CVD)反應之動力學與現象論的相關性。對於 CVD反應速度與溫度的關係,就熱分解的遊離基(free redical)及鹵化物還原的二 種過程進行探討。基材表面反應及氣固反應是重要的過程。前者對較高溫之熱分 解有利;後者對較低溫之還原反應敏感。熱分解反應如低烷類氣體之高分子炭膜 化或緻密矽膜的形成。還原反應如金屬鎢之自WF�隍R出則依Maxwell-Boltzmaan 速度分佈論進行。實驗數據引用之檢討,說明了動力論與現象論的相關性。 |
英文摘要 | The correlation between kinetics and phenomenology of ChemicalVapor Deposition (CVD) has been disscussed. ln.particularthe relationshipbetween the deposition rate and its deposition time for the pyrolytic reaction and the reduction reaction has been established. There are two importantreactions in the CVD process: namely the surface reaction and the gassolid reaction. The former is essential for the formation of both the pyrolyticcarbon layer film, as well as the dense silicon semiconductive thin filmat elevated temperatures; the latter is sensible to the .reduction reaction inthe lower temperature process. It is found that the Maxwell-Boltzmanndistribution holds in such a reduction reaction of tungsten from WF�� gas.Experimental data are cited to demonstrate the relationship between concepts of kinetics and phenomenonly of CVD. |
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