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題 名 | 相變化記憶體的未來及展望=The Future Prospect of the Phase Change Memory |
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作 者 | 簡維志; | 書刊名 | 奈米通訊 |
卷 期 | 22:4 2015.12[民104.12] |
頁 次 | 頁7-11 |
分類號 | 448.57 |
關鍵詞 | 相變化記憶體; 存儲級記憶體; Phase Change memory; Storage Class Memory; |
語 文 | 中文(Chinese) |
中文摘要 | 過去四十幾年來,相變化記憶體 (Phase Change Memory) 因為有機會成為完美的通用型非揮發性記憶體而被廣泛的研究及討論。相變化記憶體具備很多優點,例如非揮發性、良好的微縮性、極高的寫入次數、非常快的存取速度和多值化操作。這些優越的特性讓相變化記憶體可以被應用於不同的產品。本文將介紹一個全新的記憶體概念 "存儲級記憶體 (Storage Class Memory)",而相變化記憶體將在此新領域扮演一個不可或缺的角色。 |
英文摘要 | In order to realize the concept of “universal memory,” phase change memory (PCM) has been proposed and widely investigated for more than 40 years. PCM shows several advantages such as nonvolatility, scalability, endurance, speed, and multi-level cell (MLC) storage. These good performances enable PCM for many specific applications. A new memory concept, storage class memory (SCM), will be introduced in this article, which paves a new direction for PCM study where other existed memories could hardly achieve. |
本系統中英文摘要資訊取自各篇刊載內容。