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題 名 | 臨場穿透式電子顯微鏡分析於成長矽鍺異質介面奈米線之應用=In-situ Transmission Electron Microscopy Studies of the Growth of Si-Ge Heterojunction Nanowires |
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作 者 | 溫政彥; | 書刊名 | 奈米通訊 |
卷 期 | 19:4 2012.12[民101.12] |
頁 次 | 頁2-8 |
分類號 | 440.34 |
關鍵詞 | 臨場穿透式電子顯微鏡分析; 奈米線; 矽鍺異質介面結構; In-situ transmission electron microscopy; Nanowires; Si-Ge heterojunction structures; |
語 文 | 中文(Chinese) |
中文摘要 | 以臨場電子顯微鏡分析技術觀察奈米材料的成長,可以得知材料成長過程中真實的形貌、準確量測成長的速率、而後以動力學分析建立材料成長的機制、或是調控材料製程所需的參數。在本文中,將討論以此分析技術研究矽奈米線的成長機制,並將結果應用於成長矽鍺異質介面奈米線結構。奈米線合成方法中,催化金屬內矽或鍺的溶解度,對於異質介面處成分轉換的快慢有關鍵的影響。臨場觀察亦發現,在奈米尺度下,材料的形貌會隨著催化劑金屬中,矽的過飽和度的變化,而呈現出週期性的轉變。於此,為了合成矽鍺異質介面,使用固態的金鋁合金為催化劑,在奈米線中製作此類結構。所形成的異質介面沒有差排存在,因此介面附近矽鍺的晶格將會有明顯的應變,此特性將可應用於改變矽鍺的能帶結構。 |
英文摘要 | In-situ transmission electron microscopy(TEM)study provides rich information of the growth of nanomaterials, including the real morphology during growth, kinetics for deriving growth mechanisms, and growth parameters. In this report, the growth mechanism of nanowires derived from in-situ TEM observations and the applications to the fabrication of Si-Ge heterojunction structures in nanowires will be discussed. In the growth of heterostructure nanowires, the solubility of Si or Ge in catalysts is a key parameter to the compositional abruptness at the interface. It's found that there are periodic oscillations of morphology during Si nanowire growth. These oscillations are related to the change of Si supersaturation in the catalyst. Based on these observations, a particular AlAu2 alloy catalyst, which has low Si and Ge solubility and unnoticeable morphological oscillations, is used for the growth of Si/Ge heterojunction nanowire. In the Si/ Ge heterostructures, there is no misfit dislocation at the interface; therefore, lattice mismatch strongly strains the Si and Ge lattices near the interface. It is expected that in such heterojunction structures, the band structure or other physical properties of Si and Ge will significantly change. |
本系統中英文摘要資訊取自各篇刊載內容。