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| 題 名 | The Investigation of Morphological Evolution and Electrical Characteristics of Anodic Oxidized Gd-Oxide on Stacked Gate Structure=陽極氧化之釓氧化物於堆疊閘極結構的形態演變及電氣特性之研究 |
|---|---|
| 作 者 | 黃琪聰; 柯鴻禧; 王嘉安; | 書刊名 | 中正嶺學報 |
| 卷 期 | 39:2(A) 2010.11[民99.11] |
| 頁 次 | 頁11-21 |
| 分類號 | 468 |
| 關鍵詞 | 金屬氧化物半導體; 堆疊閘極氧化層; 氧化釓; 陽極氧化; MOS; Stacked gate oxide; Gd₂O₃; Anodic oxidation; |
| 語 文 | 英文(English) |
| 中文摘要 | 本研究係以陽極氧化法及快速退火製備具有結晶氧化釓(釓氧化物)和非晶態的二氧化矽所組成的堆疊閘極氧化層的金屬氧化物半導體(MOS)元件。釓氧化物薄膜的特性,分別利用透射電子顯微鏡(TEM)及X射線繞射儀(XRD)來測量堆疊閘極的物理堆積厚度及其成長的結構。電氣特性則以 Au/Gd2O3/SiO2/Si金屬-絕緣體-半導體堆疊結構進行電容電壓和電流電壓的分析。結果發現,當釓氧化物的晶體結構由非晶態轉變成晶態時,電場強度會隨之增加。 |
| 英文摘要 | Metal-oxide-semiconductor (MOS) devices, using a stacked gate oxide consisting of crystalline Gd2O3 (Gd-oxide) and amorphous SiO2, were prepared by anodic oxidation and rapid thermal anneal in this study. The characterizations of Gd-oxide films were analyzed by transmission electron microscopy (TEM) and X-ray Diffraction (XRD) to determine the physics thickness of stacked oxide films and the growth structure, respectively. Electrical characterization was carried out on Au/Gd2O3/SiO2/Si metal-insulator-semiconductor stacked structures by capacitance-voltage and current-voltage analyses. As a result, the electric field strength increased while the structures of Gd-oxide change from amorphous to crystalline oxide structure. |
本系統中英文摘要資訊取自各篇刊載內容。