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| 題 名 | 複晶矽薄膜電晶體元件特性及雷射結晶技術簡介=The Grain-Related Characteristics and the Laser Crystallization Technologies in Poly-Si TFTs |
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| 作 者 | 冉曉雯; | 書刊名 | 光學工程 |
| 卷 期 | 98 2007.06[民96.06] |
| 頁 次 | 頁1-8 |
| 專 輯 | 顯示器 |
| 分類號 | 448.552 |
| 關鍵詞 | 複晶矽薄膜電晶體; 晶粒; 雷射結晶; Poly-Si; TFTs; Laser annealing; Grain; Crystallization; |
| 語 文 | 中文(Chinese) |
| 中文摘要 | 本篇文章介紹複晶矽薄膜電晶體的元件特性,先討論複晶矽薄膜電晶體和非晶矽薄膜電晶體的差異,說明複晶矽薄膜電晶體對顯示技術發展的重要性,再針對晶粒結構影響之下,複晶矽薄膜電晶體的特殊電性做介紹,然後引入製程面,討論雷射結晶製程對晶粒結構的影響,並介紹幾種發展中的先進晶粒成長控制技術,以期使讀者對複晶矽薄膜電晶體有一初步的認識。 |
| 英文摘要 | To address the device characteristics of poly-Si TFTs, we firstly compared poly-Si TFTs and a-Si TFTs to demonstrate the advantages of poly-Si TFTs. Then, the grain structure and its influence on the device performance were discussed. To obtain large and uniform grains, the laser crystallization technologies were briefly introduced. Some advanced grain-control crystallization methods were also presented to perform the state-of-the-art. |
本系統中英文摘要資訊取自各篇刊載內容。