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頁籤選單縮合
題 名 | 雜散摻雜原子對多重閘極電晶體的影響=Impact of Discrete Impurity Atoms on Multi-Gate MOSFETs |
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作 者 | 林政男; 江孟學; | 書刊名 | 宜蘭大學工程學刊 |
卷 期 | 3 2007.02[民96.02] |
頁 次 | 頁17-29 |
分類號 | 448.552 |
關鍵詞 | 雜散摻雜; 多重閘極電晶體; 臨界電壓; 汲極引致能障下降; Discrete dopant effects; Multi-gate MOSFETs; Threshold voltage; DIBL; |
語 文 | 中文(Chinese) |
中文摘要 | 雜散掺雜效應(Discrete dopant effects)透過學理上的分析與二維、三維的數值模擬,探討在元件極度微縮下的特性變化,尤其是在多重閘極電晶體(Multi-gate MOSFETs)結構上。為了深入了解基本的物理意義,摻雜原子(Doping atoms)的變動問題將會以宏觀的模型處理,重點放在奈米微縮元件上的摻雜物離散分佈變化,特別是當通道上只有極少數雜質原子的極端例子。結果將會表現出極度微縮元件易受到離散掺雜的影響,即使是在一個未摻雜的矽通道上都可能引起無法接受的變動範圍,因此如何有效的控制摻雜,在元件設計方面將會是有其必要性的。 |
英文摘要 | Impact of discrete dopant atoms on multip-gate MOSFETs including double-gate and triple-gate devices are investigated via physical analyses and numerical simulations. To gain insight into the discrete dopant effects, macro-modeling approach is used for the distribution of random dopants in the channel. It is found that such effects could become more significant as devices continue to scale. Even for the extreme case of a single atom in the expected undesired channel as a result of the undesired impurity, impact from the randomness of the single dopant is still unavoidable. Device design issues and insights of multi-gate CMOS devices accounting for discrete dopants are discussed in the paper. |
本系統中英文摘要資訊取自各篇刊載內容。