查詢結果分析
來源資料
相關文獻
- Plasma Induced Wafer Charging Sensor
- 電漿密度量測系統的製作與評估
- 淺談VLSI製程中電漿製程損傷效應
- 高密度電漿源設計製作及其應用在半導體製程之發展情況
- 呼吸防護具直讀式防護係數測試系統之研發
- 高密度感應耦合電漿設備之電漿特性與其蝕刻機制研究
- A Powerful and Sensitive Gauge for Plasma-Process-Induced Damage in Differential Amplifier Circuit Design
- Detection of Gate-Oxide Integrity in Plasma Etching Process with Differential Amplifier Circuit Design
- 淺談電漿蝕刻對低溫複晶矽薄膜電晶體之損傷效應
- 粒子電荷偵測器的應用及固著劑的介紹
頁籤選單縮合
題名 | Plasma Induced Wafer Charging Sensor=電漿製程表面電荷偵測器之研製 |
---|---|
作者 | 馬紹銘; Ma, Shawming; McVittie,James P.; |
期刊 | 中國工程學刊 |
出版日期 | 19980100 |
卷期 | 21:1 1998.01[民87.01] |
頁次 | 頁11-19 |
分類號 | 448.5 |
語文 | eng |
關鍵詞 | 電漿製程; 電荷累積電壓; 電荷偵測器; 即時量測; Plasma processing; Surface charging voltage; Charging sensor; Real-time measurement; |
中文摘要 | 本文探討一種新發展出利用於超大型積層電路電漿製程表面電荷偵測器之研製,此種偵測器係在晶圓上直接量測金氧半導體電容器在電漿製程中因電荷累積而在多晶矽閘極與底材兩電極間所形成的電荷累積電壓,並由晶圓上矩陣排列的電極得出製程中晶圓上電荷累積分佈情形。此種偵測器完全利用現有互補式金氧半導體製程製作而成,與其他電漿製程偵測器比較,是現有方法中唯一能分辨瞬間電荷累積與穩定電荷累積現像的偵測器。而且這種方法非常省時,並不需製程後的元件測量,可利用於未來電漿製程與設備開發之用。 ully compatible with present CMOS processes. Comparisons between different characterization methods of plasma charging are also discussed. This sensor can differentiate the charging condition for different process stages (on-transient, steady state, off-transient). In addition, this sensor provides a faster reading method of charging without further device measurements after plasma processing. From the experimental results of probe measurements in Ar, SF6 and C2C1F5 plasma, this probe shows excellent capability on real-time monitoring of charging voltage. This sensor can be applied to IC plasma processing and equipment development, and trouble shooting in the future. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。