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| 題 名 | 以傅氏紅外線光譜儀對矽基元件Si-SiO[feaf]介面矽氧層範圍之辨識=The Comparision of the Width of Si-SiO[feaf]Interface Layer by FTIR |
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| 作 者 | 蔡震寰; 余安錠; | 書刊名 | 筧橋學報 |
| 卷 期 | 7 2000.09[民89.09] |
| 頁 次 | 頁163-180 |
| 分類號 | 448.551 |
| 關鍵詞 | 橢圓分析儀; 傅氏紅外線光譜儀; 10%氫氟酸水溶液; Si-SiO[feaf]介面; 矽氧矽鍵結反對稱伸張運動; Ellipsometer; FTIR; HF(10%) solution; Si-SiO[feaf]interface; Si-O-Si antisymmetric stretching mode; |
| 語 文 | 中文(Chinese) |
| 中文摘要 | 矽基積體電路元件是當今半導體工業之主流,而二氧化矽薄膜於該IC元件中又扮演著關鍵的角色,其內部鍵結缺陷之情況尤其是SiO2-Si介面的堆疊範圍每每關係到元件操作功能的正常與否,故薄性質之量測實在有其必要性。本文為便於驗證量測方法之可信度,故選擇已確定SiO2-Si介面有明顯差異的矽基薄膜塊材為測試對象(包括:等溫成長之等厚度乾、濕氧性二氧化矽薄膜)。首先,以傅氏紅外線光譜儀(FTIR)就1100℃迴火處理前、後之上述薄膜試片估整體之量測;接著,配合氫氟酸(HF)之腐蝕薄膜和橢圓分析儀之監控剩餘厚度的功能,對該些試片之薄膜縱深採逐層剔除式的量測,分別得出能譜中對應矽氧矽鍵結反對稱伸張運動吸收谷位置及半高寬隨薄膜剩餘厚度之變化曲線;最後並藉以分析、比較出待測薄膜試片Si-SiO2介面堆疊範圍之差異。據此乃成功地將FTIR量測技術在不假其它儀器之佐證以及無須曝露Si-SiO2介面層之情況下,提昇到可深入完成此介面過渡層厚度研判之水準。 |
| 英文摘要 | The integrated circuits (IC) based on silicon substrate play a main role hitherto in the semiconductor industry and the IC device can't be fabricated without SiO2 films. Since the operating performance of the device is related closely to the defects in the films and especially, the width of Si-SiO2 interface layer, the analysis work for the film on the silicon substrate is very important. For the benefit of this research, the dry/wet oxide films grown at equal temperature are chosen as sample, whose widths of Si-SiO2 interface are different obviously. At the beginning of the paper, we use FTIR to measure the above on-etched sample before/after the 1100℃ annealing. Then, the films of the dry/wet oxide samples before/ after the annealing are reduced gradually by the etching with HF (10%) solution once before measurement and the ellipsometer is employed for watching the thickness of the films. According to the FTIR absorption valley wave number and the full width at half maximum of Si-O-Si antisymmetric stretching mode, the width of Si-SiO2 interface in the samples could be analyzed. Finally, we could identify the difference of Si-SiO2 interface among the samples without the assistance of another instruments and exposuring the interface. |
本系統中英文摘要資訊取自各篇刊載內容。