頁籤選單縮合
題名 | Formation of D⁻ Centers in GaAs/AlGaAs Quantum Wells= |
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作者 | Lee,C. H.; Chang,Y. H.; Lin,H. H.; Lee,C. P.; |
期刊 | Chinese Journal of Physics |
出版日期 | 19980600 |
卷期 | 36:3 1998.06[民87.06] |
頁次 | 頁519-526 |
分類號 | 331.3 |
語文 | eng |
關鍵詞 | |
英文摘要 | Three different experiments were employed to study the behaviors of neutral (D⁰) and netatively charged donors (D⁻) in doped GaAs/AlGaAs multiple quantum wells. The existence of the D⁻ centers in such structures were demonstrated, and its optical properties were investigated. The spectral responses of such systems under different experimental conditions, such as different barrier doping concentration, different temperature, and different exposure to light illumination were studied. A potential fluctuation model was proposed to explain the experimental results. PACS 71.55.-i - Impurity and defect level. PACS 71.55.Eq - Ⅲ - Ⅴ semiconductors. |
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